An Accurate and Efficient High Frequency Noise Simulation Technique for Deep Submicron MOSFETs
نویسندگان
چکیده
Based on an active transmission line concept and twodimensional (2-D) device simulations, an accurate and computationally efficient simulation technique for high frequency noise performance of MOSFETs is demonstrated. Using a Langevin stochastic source term model and small-signal equivalent circuit of the MOSFET, three intrinsic noise parameters ( , , and ) for the drain noise and induced gate noise are calculated. Validity and error analysis for the simulation are discussed by comparing the simulation results with theoretical results as well as measured data.
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